v rrm = 100 v - 600 v i f = 300 a features ? high surge capability do-9 package ? types up to 600 v v rrm ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol S300B (r) s300d (r) s300e (r) s300g (r) unit repetitive peak reverse voltage v rrm 100 200 300 400 v rms reverse voltage v rms 70 140 212 280 v silicon standard recover y diode conditions 600 420 2. reverse polarity (r): stud is anode. S300B thru s300jr s300j (r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) dc blocking voltage v dc 100 200 300 400 v continuous forward current i f 300 300 300 300 a operating temperature t j -55 to 150 -55 to 150 -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 -55 to 150 -55 to 150 c parameter symbol S300B (r) s300d (r) s300e (r) s300g (r) unit diode forward voltage 1.2 1.2 1.2 1.2 10 10 10 10 a 12 12 12 12 ma thermal characteristics thermal resistance, junction - case r thjc 0.16 0.16 0.16 0.16 c/w -55 to 150 t c = 25 c, t p = 8.3 ms 6850 6850 600 i f,sm reverse current i r v f -55 to 150 s300j (r) 10 v r = 100 v, t j = 175 c 0.16 1.2 12 v a 6850 v r = 100 v, t j = 25 c i f = 300 a, t j = 25 c t c 130 c conditions 6850 6850 300 electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
S300B thru s300jr www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. S300B thru s300jr do-9 (do--205ab) g d h i f b a e c inches millimeters min max min max a m 20 * p 1.5 b ----- 1.10 ----- 27.94 c 1.24 1.25 31.5 31.90 d 5.31 5.98 135 152 e 0.78 0.828 19.60 21.03 f 0.470 0.530 11.94 13.46 g ----- 1.122 ----- 28.5 h ----- 0.787 ----- 20.0 i 0.330 0.350 8.38 8.89 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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